超声波燃气表矩形流道的雷诺修正系数仿真研究

在超声波流量计测量技术中, 雷诺修正系数相关的研究对于提高计量精度有重要作用. 为研究矩形流道的雷诺修正系数与雷诺数的关系, 对矩形流道在常温常压流量较小情况下进行仿真, 结果发现: 矩形流道层流状态下的雷诺修正系数与雷诺数呈线性相关. 保持压强、体积流量不变, 在不同温度下进行仿真及拟合, 结果表明: 在不同温度下雷诺修正系数与雷诺数的线性关系依然满足. 在上述实验基础上, 对矩形流道湍流状态下的雷诺修正系数与雷诺数关系进行研究, 通过改变温度、压强和体积流量进行仿真及拟合发现, 矩形流道湍流状态下雷诺修正系数与雷诺数呈非线性相关.     

金刚石衬底上GaN HEMT沟道温度建模:各向异性且非均匀热导率的影响

为了改善GaN HEMT的自热效应,集成高热导率的金刚石衬底有助于增强器件有源区的热量耗散。然而,化学气相淀积(CVD)生长的多晶金刚石(PCD)具有柱状晶粒结构,导致了各向异性的材料热导率,且其热导率值与生长厚度有关。为此,通过建模金刚石生长过程中晶粒尺寸的演变过程,计算了金刚石沿面内和截面方向的热导率。基于该PCD热导率模型,利用计入材料非线性热导率的GaN器件热阻解析模型,计算得到了GaN HEMT沟道温度的波动范围,并分析了其与器件结构(栅长、栅宽、栅间距、衬底厚度)和功耗的依赖关系。最后,通过与有限元(FEM)仿真结果对比,分区域提取了GaN HEMT器件中PCD衬底的有效热导率,分别为260~310 W/(m·K)和1 250~1 450 W/(m·K)。本文的计算为预测金刚石衬底上GaN HEMT器件的沟道温度提供了快速、有效的方法。     

Terahertz generation in quantum cascade structures by two-color deriving fields: An approach to reach inversion population via optical pumping

In this paper, a quantum cascade laser (QCL) design is proposed based on GaAs/AlGaAs material system, which simultaneously operates at three widely separated wavelengths (${\lambda }_1=11.1\mu m,{\lambda }_2=14.1\mu m$ and ${\lambda }_{THz}=60\mu m$). In the design, all the wavelength radiations are achieved by the engineering of the electronic spectrum via the quantum-well widths and the applied electric field in a single active region within a same waveguide. The mid-infrared (mid-IR) wavelengths are obtained by adoption a dual-upper-state active region, and the proposed design aims to use both the mid-IR radiations as the coherent deriving fields to populate the upper THz lasing state to aid the THz-laser population inversion via optical pumping instead of direct electrical injection. A detailed analysis of electronic transport in the structure is carried out using a multi-level rate-equation model. The results show that the proposed structure offers an alternative approach to room temperature THz generation in QCLs.     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Growth and characterization of two-dimensional crystals for communication and energy applications

This review article covers the growth and characterization of two-dimensional (2D) crystals of transition metal chalcogenides, h-BN, graphene, etc. The chemical vapor transport method for bulk single crystal growth is discussed in detail. Top-down methods like mechanical and liquid exfoliation and bottom-up methods like chemical vapor deposition and molecular beam epitaxy for mono/few-layer growth are described. The optimal characterization techniques such as optical, atomic force, scanning electron, and Raman spectroscopy for identification of mono/few-layer(s) of the 2D crystals are discussed. In addition, a survey was done for the application of 2D crystals for both creation and deterministic transfer of single-photon sources and photovoltaic systems. Finally, the application of plasmonic nanoantenna was proposed for enhanced solar-to-electrical energy conversion and faster/brighter quantum communication devices.     

Hydrodynamic instability of premixed flame propagating in narrow planar channel in the presence of gas flow

The paper analyses the hydrodynamic instability of a flame propagating in the space between two parallel plates in the presence of gas flow. The linear analysis was performed in the framework of a two-dimensional model that describes the averaged gas flow in the space between the plates and the perturbations development of two-dimensional combustion wave. The model includes the parametric dependences of the flame front propagation velocity on its local curvature and on the combustible gas velocity averaged along the height of the channel. It is assumed that the viscous gas flow changes the surface area of the flame front and thereby affects the propagation velocity of the two-dimensional combustion wave. In the absence of the influence of the channel walls on the gas flow, the model transforms into the Darrieus–Landau model of flame hydrodynamic instability. The dependences of the instability growth rate on the wave vector of disturbances, the velocity of the unperturbed gas flow, the viscous friction coefficients and other parameters of the problem are obtained. It is shown that the viscous gas flow in the channel can lead, in some cases, to a significant increase in instability compared with a flame propagating in free space. In particular, the instability increment depends on the direction of the gas flow with respect direction of the flame propagation. In the case when the gas flow moves in the opposite direction to the direction of the flame propagation, the pulsating instability can appear.